UF1010G datasheet(1/2 Pages) YEASHIN

부품명	UF1010G

상세설명	ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere

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제조업체	YEASHIN [Yea Shin Technology Co., Ltd]

홈페이지	http://www.yeashin.com

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ULT RAFAST SWITCHING RECTIFIER

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere

FE A T URES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound

• Void-free Plastic in DO-41 package

• 1.0 ampere operation at TA=55 OC with no thermal runaway

• Exceeds environmental standards of MIL-S-19500/228

• Ultra fast switching for high efficiency

High temperature soldering : 260

•

OC / 10 seconds at terminals

• Pb free product at available : 99% Sn above meet RoHS environment

substance directive request

MECHANICAL DATA

• Case: Molded plastic, DO -41 GLASS PASSIVATION

• Terminals: Axial leads, solderable per MIL-STD-202,

Method 208

• Polarity: Band denotes cathode

• Mounting Position: Any

• Weight: 0.013 ounce, 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

UF100G UF101G UF102G UF104G UF106G UF108G UF1010G

UNITS

Peak Rev erse Volt age, Pepetitive ; VRM

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

DC Bl ocki ng Voltage; VR

50

100

200

400

600

800

1000

V

Average Forward Current, Io @TA=55

3.8”

lead length, 60Hz, resistive or i nductive load

1.0

A

Peak Forward Surge Current IFM (surge)

8.3msec . single half sine- wave superimposed on rated load

(JEDEC method)

30.0

A

Maximum For ward Voltage VF @1.0A, 25

1.00

1.30

1.50

1.70

V

Maxi mum Reverse Current, @ Rated TJ=25

Reverse Voltage TJ=100

5

100

µA

Typi cal Junction capacitance (Note 1) CJ

17.0

pF

Typi cal Junction Resi stance (Note 2) R JA

60.0

Reverse Recovery Time

IF=.5A, IR=1A, Irr=.25A

50

75

ns

Operati ng and Storage Temperature Range

-55 to +150

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted

.034 (.86)

.028 (.71)

.205 (5.2)

.160 (4.1)

.107 (2.7)

.080 (2.0)

DIA.

DO-41

Unit:inch(mm)

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

DATA SHEET

UF100G~UF1010G

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20110725

°C

°C/W

°C

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