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STPS8L30B 데이터시트(PDF) 2 Page - STMicroelectronics |
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STPS8L30B 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 7 page Characteristics STPS8L30 2/7 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.23 x I F(AV) + 0.021 IF 2 (RMS) Table 2. Thermal Parameters Symbol Parameter Value Unit Rth(j-c) Junction to case 2.5 °C/W Table 3. Static Electrical Characteristics Symbol Parameter Tests conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 1 mA Tj = 100° C 15 40 VF (1) Forward voltage drop Tj = 25° C IF = 8 A 0.49 V Tj = 125° C 0.35 0.40 Tj = 25° C IF = 16 A 0.63 Tj = 125° C 0.448 0.57 1. Pulse test:* tp = 380 µs, δ < 2% Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature ( δ = 0.5) P (W) F(AV) T δ=tp/T tp I (A) F(AV) δ = 1 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 02 468 10 0.0 1.0 2.0 3.0 4.0 5.0 0 25 50 75 100 125 150 I (A) F(AV) T (°C) amb R =70°C/W th(j-a) R=R th(j-a) th(j-c) 0 1 2 3 4 5 6 7 8 9 |
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