STP9NK65Z_07 datasheet(4/15 Pages) STMICROELECTRONICS

부품명	STP9NK65Z

상세설명	N-channel 650 V - 1 - 6.4 A TO-220 / TO-220FP

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Electrical characteristics

STP9NK65Z - STP9NK65ZFP

4/15

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, @125 °C

1

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 3.2 A

1

1.2

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward

transconductance

VDS = 15 V, ID = 3.2 A

6

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1145

130

28

pF

Coss eq

(2)

.

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 400 V

55

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 6.4 A,

VGS = 10 V

(see Figure 18)

41

7.5

22

nC

유사한 부품 번호 - STP9NK65Z_07

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