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STP9NK65Z 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STP9NK65Z
상세설명  N-channel 650 V - 1 - 6.4 A TO-220 / TO-220FP
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STP9NK65Z - STP9NK65ZFP
Electrical ratings
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
VDS
Drain-source voltage (VGS = 0)
650
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
6.4
6.4 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
4
4(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
25.6
25.6 (1)
A
PTOT
Total dissipation at TC = 25 °C
125
30
W
Derating factor
1
0.24
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100 pF, R=1.5 k
Ω)
4000
V
dv/dt (3)
3.
ISD ≤ 6.4 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (DC)
-
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
-55 to 150
°C
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case max
1
4.2
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
6.4
A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAR, VDD=50 V)
200
mJ


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