전자부품 데이터시트 검색엔진 |
|
IRF9952TRPBF 데이터시트(PDF) 2 Page - International Rectifier |
|
IRF9952TRPBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRF9952PbF 2 www.irf.com
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 30 VGS = 0V, ID = 250µA P-Ch -30 VGS = 0V, ID = -250µA N-Ch 0.015 Reference to 25 °C, ID = 1mA P-Ch 0.015 Reference to 25 °C, ID = -1mA 0.08 0.10 VGS = 10V, ID = 2.2A 0.12 0.15VGS = 4.5V, ID = 1.0A 0.1650.250 VGS = -10V, ID = -1.0A 0.290 0.400 VGS = -4.5V, ID = -0.50A N-Ch 1.0 VDS = VGS, ID = 250µA P-Ch -1.0 VDS = VGS, ID = -250µA N-Ch 12 VDS = 15V, ID = 3.5A P-Ch 2.4 VDS = -15V, ID = -2.3A N-Ch 2.0 VDS = 24V, VGS = 0V P-Ch -2.0 VDS = -24V, VGS = 0V N-Ch 25VDS = 24V, VGS = 0V, TJ = 125°C P-Ch -25VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±20V N-Ch 6.9 14 P-Ch 6.1 12 N-Ch 1.0 2.0 P-Ch 1.7 3.4 N-Ch 1.8 3.5 P-Ch 1.1 2.2 N-Ch 6.2 12 P-Ch 9.7 19 N-Ch 8.8 18 P-Ch 14 28 N-Ch 13 26 P-Ch 20 40 N-Ch 3.0 6.0 P-Ch 6.9 14 N-Ch 190 P-Ch 190 N-Ch 120 pF P-Ch 110 N-Ch 61 P-Ch 54 V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 1.8A, VDS = 10V, VGS = 10V P-Channel ID = -2.3A, VDS = -10V, VGS = -10V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, RD = 10Ω N-Channel VGS = 0V, VDS = 15V, = 1.0MHz P-Channel VGS = 0V, VDS = -15V, = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch 1.7 P-Ch -1.3 N-Ch 16 P-Ch 16 N-Ch 0.82 1.2 TJ = 25°C, IS = 1.25A, VGS = 0V P-Ch -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V N-Ch 27 53 P-Ch 27 54 N-Ch 28 57 P-Ch 31 62 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =1.25A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.25A, di/dt = 100A/µs N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. nA |
유사한 부품 번호 - IRF9952TRPBF |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |