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IRF9952TRPBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF9952TRPBF
상세설명  Generation V Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF9952TRPBF 데이터시트(HTML) 2 Page - International Rectifier

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IRF9952PbF
2
www.irf.com
… Surface mounted on FR-4 board, t ≤ 10sec.
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 30
—
—
VGS = 0V, ID = 250µA
P-Ch -30
—
—
VGS = 0V, ID = -250µA
N-Ch — 0.015—
Reference to 25
°C, ID = 1mA
P-Ch — 0.015—
Reference to 25
°C, ID = -1mA
— 0.08 0.10
VGS = 10V, ID = 2.2A „
— 0.12 0.15VGS = 4.5V, ID = 1.0A „
— 0.1650.250
VGS = -10V, ID = -1.0A „
— 0.290 0.400
VGS = -4.5V, ID = -0.50A „
N-Ch 1.0
—
—
VDS = VGS, ID = 250µA
P-Ch -1.0 —
—
VDS = VGS, ID = -250µA
N-Ch —
12
—
VDS = 15V, ID = 3.5A „
P-Ch —
2.4
—
VDS = -15V, ID = -2.3A
„
N-Ch —
—
2.0
VDS = 24V, VGS = 0V
P-Ch —
— -2.0
VDS = -24V, VGS = 0V
N-Ch —
—
25VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch —
—
-25VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
N-P ––
— ±100
VGS = ±20V
N-Ch —
6.9
14
P-Ch —
6.1
12
N-Ch —
1.0 2.0
P-Ch —
1.7 3.4
N-Ch —
1.8 3.5
P-Ch —
1.1 2.2
N-Ch —
6.2
12
P-Ch —
9.7
19
N-Ch —
8.8
18
P-Ch —
14
28
N-Ch —
13
26
P-Ch —
20
40
N-Ch —
3.0 6.0
P-Ch —
6.9
14
N-Ch —
190
—
P-Ch —
190
—
N-Ch —
120
—
pF
P-Ch —
110
—
N-Ch —
61
—
P-Ch —
54
—
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
V/°C
V
S
µA
nC
ns
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
„
P-Channel
ID = -2.3A, VDS = -10V, VGS = -10V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
„
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
RD = 10Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
N-Ch
P-Ch
Parameter
Min. Typ. Max. Units
Conditions
N-Ch —
—
1.7
P-Ch —
— -1.3
N-Ch —
—
16
P-Ch —
—
16
N-Ch — 0.82 1.2
TJ = 25°C, IS = 1.25A, VGS = 0V ƒ
P-Ch — -0.82 -1.2
TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
N-Ch —
27
53
P-Ch —
27
54
N-Ch —
28
57
P-Ch —
31
62
Source-Drain Ratings and Characteristics
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF =1.25A, di/dt = 100A/µs
P-Channel
„
TJ = 25°C, IF = -1.25A, di/dt = 100A/µs
‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Notes:
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12)
P-Channel
Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
nA


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