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SI8600AD-B-IS 데이터시트(PDF) 10 Page - Silicon Laboratories |
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SI8600AD-B-IS 데이터시트(HTML) 10 Page - Silicon Laboratories |
10 / 40 page 10 Rev. 1.2 Si860x Table 7. Insulation and Safety-Related Specifications Parameter Symbol Test Condition Value Unit NB SOIC-8 NB SOIC-16 WB SOIC-16 Nominal Air Gap (Clearance)1 L(1O1) 4.9 4.9 8.0 mm Nominal External Tracking (Creepage)1 L(1O2) 4.01 4.01 8.0 mm Minimum Internal Gap (Internal Clearance) 0.011 0.011 0.014 mm Tracking Resistance (Proof Tracking Index) PTI IEC60112 600 600 600 VRMS Erosion Depth ED 0.040 0.019 0.019 mm Resistance (Input-Output)2 RIO 1012 1012 1012 Capacitance (Input-Output)2 CIO f = 1 MHz 1.0 2.0 2.0 pF Input Capacitance3 CI Non-I2C Channel 4.0 4.0 4.0 pF I2C Channel 10 10 10 pF Notes: 1. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-8 and SOIC-16 packages and 8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8 and SOIC-16 packages and 7.6 mm minimum for the WB SOIC-16 package. 2. To determine resistance and capacitance, the Si860x, SO-16, is converted into a 2-terminal device. Pins 1–8 (1–4, SO- 8) are shorted together to form the first terminal and pins 9–16 (5–8, SO-8) are shorted together to form the second terminal. The parameters are then measured between these two terminals. 3. Measured from input pin to ground. Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings Parameter Test Conditions Specification NB SOIC-8 SOIC-16 WB SOIC-16 Basic Isolation Group Material Group I I Installation Classification Rated Mains Voltages < 150 VRMS I-IV I-IV Rated Mains Voltages < 300 VRMS I-III I-IV Rated Mains Voltages < 400 VRMS I-II I-III Rated Mains Voltages < 600 VRMS I-II I-III |
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