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SI8600AD-B-IS 데이터시트(PDF) 10 Page - Silicon Laboratories

부품명 SI8600AD-B-IS
상세설명  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current
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제조업체  SILABS [Silicon Laboratories]
홈페이지  http://www.silabs.com
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10
Rev. 1.2
Si860x
Table 7. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
NB
SOIC-8
NB
SOIC-16
WB
SOIC-16
Nominal Air Gap (Clearance)1
L(1O1)
4.9
4.9
8.0
mm
Nominal External Tracking
(Creepage)1
L(1O2)
4.01
4.01
8.0
mm
Minimum Internal Gap
(Internal Clearance)
0.011
0.011
0.014
mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
600
VRMS
Erosion Depth
ED
0.040
0.019
0.019
mm
Resistance (Input-Output)2
RIO
1012
1012
1012
Capacitance (Input-Output)2
CIO
f = 1 MHz
1.0
2.0
2.0
pF
Input Capacitance3
CI
Non-I2C Channel
4.0
4.0
4.0
pF
I2C Channel
10
10
10
pF
Notes:
1. VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-8 and SOIC-16 packages and
8.5 mm minimum for the WB SOIC-16 package. UL does not impose a clearance and creepage minimum for
component level certifications. CSA certifies the clearance and creepage limits as 3.9 mm minimum for the NB SOIC-8
and SOIC-16 packages and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si860x, SO-16, is converted into a 2-terminal device. Pins 1–8 (1–4, SO-
8) are shorted together to form the first terminal and pins 9–16 (5–8, SO-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Conditions
Specification
NB SOIC-8
SOIC-16
WB SOIC-16
Basic Isolation Group
Material Group
I
I
Installation Classification
Rated Mains Voltages < 150 VRMS
I-IV
I-IV
Rated Mains Voltages < 300 VRMS
I-III
I-IV
Rated Mains Voltages < 400 VRMS
I-II
I-III
Rated Mains Voltages < 600 VRMS
I-II
I-III


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