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BC847QAPN 데이터시트(PDF) 6 Page - NXP Semiconductors |
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6 / 14 page NXP Semiconductors BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor BC847QAPN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 19 July 2013 6 / 14 mgt727 10- 1 1 10 102 103 IC (mA) 0 600 500 400 300 200 100 hFE (1) (2) (3) VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. NPN transistor: DC current gain as a function of collector current; typical values VCE (V) 0 5 4 2 3 1 006aab422 0.10 0.05 0.15 0.20 IC (A) 0 IB (mA) = 4.0 0.8 0.4 3.6 3.2 1.6 2.4 2.8 2.0 1.2 Tamb = 25 °C Fig. 5. NPN transistor: Collector current as a function of collector-emitter voltage; typical values 0 1200 1000 800 600 400 200 mgt728 10- 2 10- 1 1 10 102 103 IC (mA) VBE (mV) (1) (2) (3) VCE = 5 V (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 6. NPN transistor: Base-emitter voltage as a function of collector current; typical values 006aab423 0.6 0.8 0.4 1.0 1.2 VBEsat (V) 0.2 IC (mA) 10- 1 103 102 1 10 (1) (2) (3) IC/IB = 20 (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 7. NPN transistor: Collector-emitter saturation voltage as a function of collector current; typical values |
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