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2SC4957-T1 데이터시트(PDF) 4 Page - Renesas Technology Corp |
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2SC4957-T1 데이터시트(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page Data Sheet PU10520EJ01V0DS 2 2SC4957 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA DC Current Gain hFE Note 1 VCE = 3 V, IC = 10 mA 75 − 150 − RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA − 12 – GHz Insertion Power Gain S21e2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz 9 11 − dB Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2.0 GHz − 1.5 2.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1.0 MHz − 0.3 0.5 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank T83 Marking T83 hFE Value 75 to 150 |
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