NDP6020P datasheet(2/6 Pages) FAIRCHILD

부품명	NDP6020P

상세설명	P-Channel Logic Level Enhancement Mode Field Effect Transistor

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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Electrical Characteristics (T

C = 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage

V

GS = 0 V, ID = -250 µA

-20

V

I

DSS

Zero Gate Voltage Drain Current

V

DS = -16 V, VGS = 0 V

-1

µA

T

J = 55°C

-10

µA

I

GSSF

Gate - Body Leakage, Forward

V

GS = 8 V, VDS = 0 V

100

nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS = -8 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage

V

DS = VGS, ID = -250 µA

-0.4

-0.7

-1

V

T

J = 125°C

-0.3

-0.56

-0.7

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = -4.5 V, ID = -12 A

0.041

0.05

Ω

T

J = 125°C

0.06

0.08

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = -2.7 V, ID = -10 A

0.059

0.07

R

DS(ON)

Static Drain-Source On-Resistance

V

GS = -2.5 V, ID = -10 A

0.064

0.075

I

D(on)

On-State Drain Current

V

GS = -4.5 V, VDS = -5 V

-24

A

g

FS

Forward Transconductance

V

DS = -5 V, ID = -12 A

14

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS = -10 V, VGS = 0 V,

f = 1.0 MHz

1590

pF

C

oss

Output Capacitance

725

pF

C

rss

Reverse Transfer Capacitance

215

pF

SWITCHING CHARACTERISTICS (Note 1)

t

D(on)

Turn - On Delay Time

V

DD = -20 V, ID = -3 A,

V

GS = -5 V, RGEN = 6 Ω

15

30

nS

t

r

Turn - On Rise Time

27

60

nS

t

D(off)

Turn - Off Delay Time

120

250

nS

t

f

Turn - Off Fall Time

70

150

nS

Q

g

Total Gate Charge

V

DS = -10 V,

I

D = -24 A, VGS = -5 V

25

35

nC

Q

gs

Gate-Source Charge

5

nC

Q

gd

Gate-Drain Charge

10

nC

NDP6020P Rev.C1

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