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TC285SPD-B0 데이터시트(PDF) 7 Page - Texas Instruments |
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TC285SPD-B0 데이터시트(HTML) 7 Page - Texas Instruments |
7 / 30 page TC285SPD-B0 1004 x 1002 PIXEL IMPACTRONTM CCD IMAGE SENSOR SOCS093 – JANUARY 2006 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 7 Advanced lateral overflow drain The advanced lateral overflow drain structure is shared by two neighboring pixels in each line. By varying the DC bias of the anti-blooming drain it is possible to control the blooming protection level and trade it for well capacity. Applying a pulse to the drain, approximately 6V above the nominal level, for a minimum of 100 µs(3H), removes all charge from the pixels. This feature permits precise control of the integration time on a frame-by-frame basis. The single-pulse clearing capability also reduces smear by eliminating accumulated charge in pixels before the start of the integration period (single sided smear). Serial register and charge multiplier The serial register of TC285SPD image sensor consists of only poly-silicon gates. It operates at high speed, being clocked from 0V to 8V. This allows the sensor to work at 30 frames/s. The serial register is used for transporting charge stored in the pixels of the memory lines to the output amplifier. The TC285SPD device has a serial register with twice the standard length. The first half has a conventional design that interfaces with the memory as it would in any other CCD sensor. The second half, however, is unique and includes 400 charge multiplication stages with a number of dummy pixels that are needed to transport charge between the active register blocks and the output amplifier. Charge is multiplied as it progresses from stage to stage in the multiplier toward the charge detection node. The charge multiplication level depends on the amplitude of the multiplication pulses (approximately 15V~22V) applied to the multiplication gate. Due to the double length of the register, first 2 lines in each field or frame scan do not contain valid data and should be discarded. Charge detection node and buffer amplifier The last element of the charge detection and readout chain is the charge detection node with the buffer amplifier. The charge detection node is using a standard Floating Diffusion (FD) concept followed by an on-chip dual-stage source-follower buffer. Another bipolar transistor (third stage) has been included in the sensor package to improve the driving capability at high speed. A load for the bipolar transistor (2.2kOhm) needs to be connected externally from the package output pin to SUB. Applying a pulse to the RST pin resets the detection node. Pixel charge summing function can be easily implemented by skipping the RST pulses. To achieve the ultimate sensor performance it is necessary to eliminate kTC noise. This is typically accomplished by using CDS (correlated double sampling) processing techniques. IMPACTRONTM devices have the potential for detecting single electrons (photons) when cooled or when sufficiently short integration times are used. |
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