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IRF7509PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF7509PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page IRF7509PbF PD - 95397 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free HEXFET® Power MOSFET N-Ch P-Ch VDSS 30V -30V RDS(on) 0.11Ω 0.20Ω 6/15/04 Micro8 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Description D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 N-CHANNEL MOSFET P-CHANNEL MOSFET www.irf.com 1 Parameter Max. Units N-Channel P-Channel VDS Drain-Source Voltage 30 -30 V ID @ TA = 25°C Continuous Drain Current, VGS 2.7 -2.0 ID @ TA = 70°C Continuous Drain Current, VGS 2.1 -1.6 A IDM Pulsed Drain Current 21 -16 PD @TA = 25°C Maximum Power Dissipation 1.25 W PD @TA = 70°C Maximum Power Dissipation 0.8 W Linear Derating Factor 10 mW/°C VGS Gate-to-Source Voltage ± 20 V VGSM Gate-to-Source Voltage Single Pulse tp<10µS 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Soldering Temperature, for 10 seconds 240 (1.6mm from case) Thermal Resistance Parameter Max. Units RθJA Maximum Junction-to-Ambient 100 °C/W Absolute Maximum Ratings |
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