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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLR3105PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLR3105PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U3105PbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 15A, VGS = 0V trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 15A, VDD = 28V Qrr Reverse RecoveryCharge ––– 82 120 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 25 100 A * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 11 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– 30 37 VGS = 10V, ID = 15A ––– 35 43 VGS = 5.0V, ID = 13A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 15 ––– ––– S VDS = 25V, ID = 15A ––– ––– 20 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Qg Total Gate Charge ––– ––– 20 ID = 15A Qgs Gate-to-Source Charge ––– ––– 5.6 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 9.0 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.0 ––– VDD = 28V tr Rise Time ––– 57 ––– ID = 15A td(off) Turn-Off Delay Time ––– 25 ––– RG = 24 Ω tf Fall Time ––– 37 ––– VGS = 5.0V, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 710 ––– VGS = 0V Coss Output Capacitance ––– 150 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 28 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 890 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 110 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 210 ––– VGS = 0V, VDS = 0V to 44V S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current m Ω |
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