 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
FQD18N20V2 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
FQD18N20V2 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 9 page  Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.58mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A -- 0.12 0.14 Ω gFS Forward Transconductance VDS = 40 V, ID = 7.5 A (Note 4) -- 11 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 830 1080 pF Coss Output Capacitance -- 200 260 pF Crss Reverse Transfer Capacitance -- 25 33 pF Coss Output Capacitance VDS = 160 V, VGS = 0 V, f = 1.0 MHz -- 70 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 160 V, VGS = 0 V -- 135 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 18 A, RG = 25 Ω (Note 4, 5) -- 16 40 ns tr Turn-On Rise Time -- 133 275 ns td(off) Turn-Off Delay Time -- 38 85 ns tf Turn-Off Fall Time -- 62 135 ns Qg Total Gate Charge VDS = 160 V, ID = 18 A, VGS = 10 V (Note 4, 5) -- 20 26 nC Qgs Gate-Source Charge -- 5.6 -- nC Qgd Gate-Drain Charge -- 10 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs (Note 4) -- 158 -- ns Qrr Reverse Recovery Charge -- 1.0 -- µC ©2009 Fairchild Semiconductor Corporation FQD18N20V2 / FQU18N20V2 Rev. C0 www.fairchildsemi.com |
유사한 부품 번호 - FQD18N20V2_13 |
|
유사한 설명 - FQD18N20V2_13 |
|
|
|
링크 URL |
| 개인정보취급방침 |
| ALLDATASHEET.CO.KR |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
