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SI4459ADY 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI4459ADY
상세설명  P-Channel 30-V (D-S) MOSFET
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Document Number: 69979
S11-1813-Rev. B, 12-Sep-11
Vishay Siliconix
Si4459ADY
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 31
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
5.3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 100
VDS = - 20 V, VGS = 0 V
- 75
VDS = - 30 V, VGS = 0 V, TJ = 75 °C
- 10
µA
VDS = - 20 V, VGS = 0 V, TJ = 75 °C
- 3
On-State Drain Currenta
ID(on)
VDS  - 10 V, VGS = - 10 V
- 30
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 15 A
0.0039
0.005
VGS = - 4.5 V, ID = - 10 A
0.0062
0.00775
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 15 A
24
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
6000
pF
Output Capacitance
Coss
860
Reverse Transfer Capacitance
Crss
790
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 20 A
129
195
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
61
95
Gate-Source Charge
Qgs
16.5
Gate-Drain Charge
Qgd
23.5
Gate Resistance
Rg
f = 1 MHz
0.6
3
6
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
16
30
ns
Rise Time
tr
16
30
Turn-Off DelayTime
td(off)
80
150
Fall Time
tf
20
40
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
75
150
Rise Time
tr
130
260
Turn-Off DelayTime
td(off)
60
120
Fall Time
tf
40
80
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 29
A
Pulse Diode Forward Current
ISM
- 70
Body Diode Voltage
VSD
IS = - 3 A, VGS = 0 V
- 0.71
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C
67
130
ns
Body Diode Reverse Recovery Charge
Qrr
74
150
nC
Reverse Recovery Fall Time
ta
22
ns
Reverse Recovery Rise Time
tb
45


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