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SI4459ADY 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4459ADY 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 69979 S11-1813-Rev. B, 12-Sep-11 Vishay Siliconix Si4459ADY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 31 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ 5.3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 100 VDS = - 20 V, VGS = 0 V - 75 VDS = - 30 V, VGS = 0 V, TJ = 75 °C - 10 µA VDS = - 20 V, VGS = 0 V, TJ = 75 °C - 3 On-State Drain Currenta ID(on) VDS - 10 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0039 0.005 VGS = - 4.5 V, ID = - 10 A 0.0062 0.00775 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 24 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 6000 pF Output Capacitance Coss 860 Reverse Transfer Capacitance Crss 790 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 20 A 129 195 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A 61 95 Gate-Source Charge Qgs 16.5 Gate-Drain Charge Qgd 23.5 Gate Resistance Rg f = 1 MHz 0.6 3 6 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 16 30 ns Rise Time tr 16 30 Turn-Off DelayTime td(off) 80 150 Fall Time tf 20 40 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 75 150 Rise Time tr 130 260 Turn-Off DelayTime td(off) 60 120 Fall Time tf 40 80 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 29 A Pulse Diode Forward Current ISM - 70 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.71 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 5 A, dI/dt = 100 A/µs, TJ = 25 °C 67 130 ns Body Diode Reverse Recovery Charge Qrr 74 150 nC Reverse Recovery Fall Time ta 22 ns Reverse Recovery Rise Time tb 45 |
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