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SFS2955 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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SFS2955 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page SFS2955 BV DSS = -60 V R DS(on) = 0.3 Ω I D = -7.3 A -60 -7.3 -5.1 -30 137 -7.3 2.4 -5.5 24 0.19 - 55 to +175 300 5.2 62.5 -- -- 20 + _ ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! 175 o C Operating Temperature ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA(Max.) @ V DS = -60V ! Low R DS(ON) : 0.22 Ω (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Junction-to-Ambient RθJC RθJA o C/W Characteristic Max. Units Symbol Typ. FEATURES Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (T C=25 o C) Continuous Drain Current (T C=100 o C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C=25 o C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , TSTG T L A V mJ A mJ V/ns W W/ o C A o C V DSS V TO-220F 1.Gate 2. Drain 3. Source 3 2 1 O 1 O 2 O 3 O 1 O 1 Rev. A |
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