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LM2936M-3.3 데이터시트(PDF) 2 Page - Texas Instruments |
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LM2936M-3.3 데이터시트(HTML) 2 Page - Texas Instruments |
2 / 28 page LM2936 SNOSC48N – JUNE 2000 – REVISED MARCH 2013 www.ti.com Connection Diagrams Figure 1. PFM Figure 2. SOT-223 Top View Top View See Package Number NDP0003B See Package Number DCY0004A Figure 3. 8-Pin SOIC (D) Figure 4. 8-Pin SOIC (D) Top View Top View See Package Number D0008A See Package Number D0008A Figure 5. TO-92 Figure 6. 8-Pin VSSOP (DGK) Bottom View Top View See Package Number LP0003A See Package Number DGK0008A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Input Voltage (Survival) +60V, −50V ESD Susceptibility (3) 2000V Power Dissipation (4) Internally limited Junction Temperature (TJmax) 150°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 10 sec.) 260°C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating the device beyond its specified operating ratings. (2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications. (3) Human body model, 100 pF discharge through a 1.5 k Ω resistor. (4) The maximum power dissipation is a function of TJmax, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJmax − TA)/θJA. If this dissipation is exceeded, the die temperature will rise above 150°C and the LM2936 will go into thermal shutdown. 2 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LM2936 |
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