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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF1404SPBF 데이터시트(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRF1404SPBF 데이터시트(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 10 page  IRF1404SPbF IRF1404LPbF HEXFET® Power MOSFET Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for low- profile applications. S D G Absolute Maximum Ratings Thermal Resistance VDSS = 40V RDS(on) = 0.004Ω ID = 162A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description 03/11/04 1 D2Pak IRF1404SPbF TO-262 IRF1404LPbF Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 162 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 115 A IDM Pulsed Drain Current 650 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 519 mJ IAR Avalanche Current 95 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range -55 to +175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB mounted, steady-state) * ––– 40 PD -95104 www.kersemi.com |
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