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CAT25M01YE-GT3 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 CAT25M01YE-GT3
상세설명  1 Mb SPI Serial CMOS EEPROM
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT25M01YE-GT3 데이터시트(HTML) 2 Page - ON Semiconductor

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CAT25M01
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2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Note 3)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS
(VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Supply Current
(Read Mode)
Read, SO open /
−40°C to +85°C
VCC = 1.8 V, fSCK = 5 MHz
1.2
mA
VCC = 2.5 V, fSCK = 10 MHz
1.8
mA
VCC = 5.5 V, fSCK = 10 MHz
3
mA
Read, SO open /
−40°C to +125°C
2.5 V < VCC < 5.5 V,
fSCK = 10 MHz
3
mA
ICCW
Supply Current
(Write Mode)
Write, CS = VCC/
−40°C to +85°C
1.8 V < VCC < 5.5 V
3
mA
Write, CS = VCC/
−40°C to +125°C
2.5 V < VCC < 5.5 V
3
mA
ISB1
Standby Current
VIN = GND or VCC,
CS = VCC, WP = VCC,
HOLD = VCC,
VCC = 5.5 V
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
3
ISB2
Standby Current
VIN = GND or VCC,
CS = VCC, WP = GND,
HOLD = GND,
VCC = 5.5 V
TA = −40°C to +85°C
3
mA
TA = −40°C to +125°C
5
mA
IL
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO
Output Leakage
Current
CS = VCC
VOUT = GND or VCC
−2
2
mA
VIL1
Input Low Voltage
VCC ≥ 2.5 V
−0.5
0.3VCC
V
VIH1
Input High Voltage
VCC ≥ 2.5 V
0.7VCC
VCC + 0.5
V
VIL2
Input Low Voltage
VCC < 2.5 V
−0.5
0.25VCC
V
VIH2
Input High Voltage
VCC < 2.5 V
0.75VCC
VCC + 0.5
V
VOL1
Output Low Voltage
VCC ≥ 2.5 V, IOL = 3.0 mA
0.4
V
VOH1
Output High Voltage
VCC ≥ 2.5 V, IOH = −1.6 mA
VCC − 0.8V
V
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 150 mA
0.2
V
VOH2
Output High Voltage
VCC < 2.5 V, IOH = −100 mA
VCC − 0.2V
V


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