BC817DS datasheet(2/7 Pages) NXP

부품명	BC817DS

상세설명	NPN general purpose double

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2 / 7 page

2002 Nov 22

2

NXP Semiconductors

Product data sheet

NPN general purpose double transistor

BC817DS

FEATURES

• High current (500 mA)

• 600 mW total power dissipation

• Replaces two SOT23 packaged transistors on same

PCB area.

APPLICATIONS

• General purpose switching and amplification

• Push-pull amplifiers

• Multi-phase stepper motor drivers.

DESCRIPTION

NPN transistor pair in a SOT457 (SC-74) plastic package.

MARKING

TYPE NUMBER

MARKING CODE

BC817DS

N3

PINNING

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

handbook, halfpage

13

2

4

5

6

Top view

MAM340

13

2

TR1

TR2

6

4

5

Fig.1

Simplified outline (SOT457) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

VCEO

collector-emitter voltage

45

V

IC

collector current (DC)

500

mA

ICM

peak collector current

1

A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor unless otherwise specified

VCBO

collector-base voltage

open emitter

−

50

V

VCEO

collector-emitter voltage

open base

−

45

V

VEBO

emitter-base voltage

open collector

−

5

V

IC

collector current (DC)

−

500

mA

ICM

peak collector current

−

1

A

IBM

peak base current

−

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

370

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

600

mW

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NXP Semiconductors	BC817DS	66Kb / 8P	NPN general purpose double transistor 2002 Nov 22
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BC817DS 데이터시트(PDF) 2 Page - NXP Semiconductors

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