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SI6426DQ 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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SI6426DQ 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page October 2001 2001 Fairchild Semiconductor Corporation Si6426DQ Rev B(W) Si6426DQ 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (2.5V to 8V). Applications • Battery protection • DC/DC conversion • Power management • Load switch Features • 5.4 A, 20 V RDS(ON) = 35 m Ω @ VGS = 4.5 V RDS(ON) = 40 m Ω @ VGS = 2.5 V • Extended VGSS range (±8V) for battery applications • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S G D S S D TSSOP-8 Pin 1 4 3 2 1 5 6 7 8 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1) 5.4 A – Pulsed 30 PD Power Dissipation (Note 1a) 1.4 W (Note 1b) 1.1 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6426 Si6426DQ 13’’ 16mm 3000 units |
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