Si6953DQ Rev. B (W)

Typical Characteristics

0

2

4

6

8

10

0

123

45

-15V

-10V

0

50

100

150

200

250

300

0

5

10

15

20

f = 1MHz

V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

DC

10s

1s

100ms

R

SINGLE PULSE

10ms

1ms

100us

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.