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SSF17N60A 데이터시트(PDF) 1 Page - Fairchild Semiconductor |
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SSF17N60A 데이터시트(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ V DS = 600V Lower R DS(ON) : 0.356 (Typ.) Advanced Power MOSFET Thermal Resistance Junction-to-Case Junction-to-Ambient R JC R JA Characteristic Max. Units Symbol Typ. FEATURES Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (T C=25 ) Continuous Drain Current (T C=100 ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T C=25 ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Value Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , TSTG T L A V mJ A mJ V/ns W A V DSS V TO-3PF 1.Gate 2. Drain 3. Source 3 2 1 O 1 O 2 O 3 O 1 O 1 oC oC oC oC θ θ Ω µ W/ oC oC/W SSF17N60A BV DSS = 600 V R DS(on) = 0.45 I D = 9 A 600 9 5.7 68 884 9 10 3.0 100 0.8 - 55 to +150 300 1.25 40 -- -- 30 + _ Ω ©1999 Fairchild Semiconductor Corporation Rev. B |
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