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SI3456DDV-T1-GE3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI3456DDV-T1-GE3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 69075 S09-1399-Rev. B, 20-Jul-09 Vishay Siliconix Si3456DDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 TJ = 150 °C TJ = 25 °C VSD -Source-to-Drain Voltage (V) 1.1 1.3 1.5 1.7 1.9 2.1 2.3 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.02 0.04 0.06 0.08 0.10 02 4 6 8 10 TJ =25 °C TJ =125 °C VGS - Gate-to-Source Voltage (V) Time (s) 0 5 10 15 20 25 0.001 0.01 0.1 1 10 100 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TA =25 °C Single Pulse 100 µA Limited byRDS(on)* BVDSS Limited 1ms 10 ms 100 ms 1s,10s DC |
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