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TLP621-2 데이터시트(PDF) 5 Page - Toshiba Semiconductor |
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TLP621-2 데이터시트(HTML) 5 Page - Toshiba Semiconductor |
5 / 10 page TLP621,TLP621 −2,TLP621−4 2007-10-01 5 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector −emitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter −collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA Collector dark current ICEO VCE = 24 V, Ta = 85°C — 2 50 μA Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 — 600 Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V Rank GB 100 — 600 % — 60 — Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 — — % IC = 2.4 mA, IF = 8 mA — — 0.4 — 0.2 — Collector −emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB — — 0.4 V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) CS VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance RS VS = 500 V 1×10 12 10 14 — Ω AC, 1 minute 5000 — — AC, 1 second, in oil — 10000 — Vrms Isolation voltage BVS DC, 1 minute, in oil — 10000 — Vdc |
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