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SI4804CDY-T1-GE3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4804CDY-T1-GE3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 68924 S-82485-Rev. A, 13-Oct-08 Vishay Siliconix Si4804CDY New Product Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 31 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 5.1 Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.2 2.4 V Gate Body Leakage IGSS VDS = 0 V, VGS = ± 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 7.5 A 0.018 0.022 Ω VGS = 4.5 V, ID = 6.5 A 0.022 0.027 Forward Transconductanceb gfs VDS = 15 V, ID = 7.5 A 20 S Dynamica Input Capacitance Ciss N-Channel VDS = 15 V, VGS = 0 V, f = 1 MHz 865 pF Output Capacitance Coss 131 Reverse Transfer Capacitance Crss 66 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 7.5 A 15.4 23 nC N-Channel VDS = 15 V, VGS = 4.5 V, ID = 7.5 A 7 10.5 Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 2.2 Gate Resistance Rg f = 1 MHz 0.4 1.9 3.8 Ω Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 918 ns Rise Time tr 12 24 Turn-Off Delay Time td(off) 17 34 Fall Time tf 918 Turn-On Delay Time td(on) N-Channel VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 17 34 Rise Time tr 13 26 Turn-Off Delay Time td(off) 19 35 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.4 A Pulse Diode Forward Currenta ISM 30 Body Diode Voltage VSD IS = 1.8 A 0.77 1.1 V Body Diode Reverse Recovery Time trr N-Channel IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 16 32 ns Body Diode Reverse Recovery Charge Qrr 816 nC Reverse Recovery Fall Time ta 10 ns Reverse Recovery Rise Time tb 6 |
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