전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

CAT24M01WE-GT3 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 CAT24M01WE-GT3
상세설명  1 Mb I2C CMOS Serial EEPROM
Download  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT24M01WE-GT3 데이터시트(HTML) 2 Page - ON Semiconductor

  CAT24M01WE-GT3 Datasheet HTML 1Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 2Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 3Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 4Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 5Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 6Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 7Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 8Page - ON Semiconductor CAT24M01WE-GT3 Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 14 page
background image
CAT24M01
http://onsemi.com
2
M0L
ALL
YM
G
M0L = Specific Device Code
A
= Assembly Location Code
LL = Assembly Lot Number
Y
= Year
M
= Month
G
= Pb−Free Package
MARKING DIAGRAMS
24M01A = Specific Device Code
A
= Assembly Location
Y
= Production Year (Last Digit)
M
= Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
24M01A
AYMXXX
24M01A = Specific Device Code
A
= Assembly Location
XXX = Last Three Digits of
XXX = Assembly Lot Number
YY = Production Year (Last Two Digits)
WW = Production Week (Two Digits)
G
= Pb−Free Designator
24M01A
AXXX
YYWWG
(SOIC−8)
(UDFN−8)
(PDIP−8)
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Notes 3, 4)
Endurance
1,000,000
Program/Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Test Condition: Page Mode, VCC = 5 V, 25°C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS
VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Read Current
Read, fSCL = 400 kHz / 1 MHz
1
mA
ICCW
Write Current
VCC = 1.8 V
3.5
mA
VCC = 5.5 V
5.0
ISB
Standby Current
All I/O Pins at GND or VCC
TA = −40°C to +85°C
2
mA
TA = −40°C to +125°C
5
IL
I/O Pin Leakage
Pin at GND or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
VIL1
Input Low Voltage
2.5 V ≤ VCC ≤ 5.5 V
−0.5
0.3 VCC
V
VIL2
Input Low Voltage
1.8 V ≤ VCC < 2.5 V
−0.5
0.25 VCC
V
VIH1
Input High Voltage
2.5 V ≤ VCC ≤ 5.5 V
0.7 VCC
VCC + 0.5
V
VIH2
Input High Voltage
1.8 V ≤ VCC < 2.5 V
0.75 VCC
VCC + 0.5
V
VOL1
Output Low Voltage
VCC ≥ 2.5 V, IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 1.0 mA
0.2
V


유사한 부품 번호 - CAT24M01WE-GT3

제조업체부품명데이터시트상세설명
logo
ON Semiconductor
CAT24M01WI-GT3 ONSEMI-CAT24M01WI-GT3 Datasheet
178Kb / 14P
   1 Mb I2C CMOS Serial EEPROM 256?묪yte Page Write Buffer
May, 2011 ??Rev. 1
CAT24M01WI-GT3 ONSEMI-CAT24M01WI-GT3 Datasheet
384Kb / 18P
   EEPROM Serial 1-Mb I2C
May, 2018 ??Rev. 4
More results

유사한 설명 - CAT24M01WE-GT3

제조업체부품명데이터시트상세설명
logo
ON Semiconductor
CAT24M01_1110 ONSEMI-CAT24M01_1110 Datasheet
185Kb / 14P
   1 Mb I2C CMOS Serial EEPROM
October, 2011 ??Rev. 2
CAV24M01 ONSEMI-CAV24M01_18 Datasheet
269Kb / 14P
   EEPROM Serial 1-Mb I2C
May, 2018 ??Rev. 2
CAT24M01 ONSEMI-CAT24M01_18 Datasheet
384Kb / 18P
   EEPROM Serial 1-Mb I2C
May, 2018 ??Rev. 4
CAV25M01 ONSEMI-CAV25M01 Datasheet
175Kb / 13P
   1 Mb SPI Serial CMOS EEPROM
June, 2013 ??Rev. 1
CAT25M01 ONSEMI-CAT25M01_16 Datasheet
117Kb / 14P
   1 Mb SPI Serial CMOS EEPROM
October, 2016 ??Rev. 2
NV25M01 ONSEMI-NV25M01 Datasheet
109Kb / 13P
   1 Mb SPI Serial CMOS EEPROM
September, 2016 ??Rev. P1
CAV25M01 ONSEMI-CAV25M01_15 Datasheet
124Kb / 14P
   1 Mb SPI Serial CMOS EEPROM
December, 2015 ??Rev. 3
CAT25M01 ONSEMI-CAT25M01 Datasheet
180Kb / 14P
   1 Mb SPI Serial CMOS EEPROM
October, 2012 ??Rev. 0
CAT25M01YI-GT3 ONSEMI-CAT25M01YI-GT3 Datasheet
180Kb / 14P
   1 Mb SPI Serial CMOS EEPROM
October, 2012 ??Rev. 0
CAT24M01 ONSEMI-CAT24M01 Datasheet
178Kb / 14P
   1 Mb I2C CMOS Serial EEPROM 256?묪yte Page Write Buffer
May, 2011 ??Rev. 1
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com