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2N4401 데이터시트(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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2N4401 데이터시트(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1 / 1 page WEJ ELECTRONIC CO.,LTD 2N4401 TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.625 W (Tamb=25 ℃) Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150℃ ELECTRICAL CHARACTERISTICS ( Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100 µA , I E=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 6 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 µA Collector cut-off current ICEO VCE=35 V , IB=0 0.1 µA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 µA DC current gain hFE 1 VCE=1 V, IC= 150mA 100 300 Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150 mA, IB=15mA 0.95 V Transition frequency f T VCE= 10V, IC= 20mA f = 100MHz 250 MHz 1 2 3 TO-92 1.EMILTTER 2.BASE 3. COLLECTOR 2N4401 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
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