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LM25085 데이터시트(PDF) 2 Page - Texas Instruments |
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LM25085 데이터시트(HTML) 2 Page - Texas Instruments |
2 / 30 page 1 2 3 4 5 8 7 6 FB PGATE ISEN GND VCC ADJ RT VIN 8 7 6 5 4 3 2 1 Exposed Pad on Bottom Connect to Ground FB GND ADJ PGATE ISEN VCC RT VIN 1 2 3 4 5 8 7 6 Exposed Pad on Bottom Connect to Ground FB PGATE ISEN GND VCC ADJ RT VIN LM25085, LM25085-Q1 SNVS593H – OCTOBER 2008 – REVISED MARCH 2013 www.ti.com Connection Diagram Figure 1. Top View 8-Lead HVSSOP-PowerPAD Figure 3. Top View See Package Number DGN0008A 8-Lead WSON See Package Number NGQ0008A Figure 2. Top View 8-Lead VSSOP See Package Number DGK0008A PIN DESCRIPTIONS Pin Name Description Application Information No. 1 ADJ Current Limit Adjust The current limit threshold is set by an external resistor from VIN to ADJ in conjunction with the external sense resistor or the PFET’s RDS(ON). 2 RT On-time control and shutdown An external resistor from VIN to RT sets the buck switch on-time and switching frequency. Grounding this pin shuts down the controller. 3 FB Voltage Feedback from the Input to the regulation and over-voltage comparators. The regulation level is 1.25V. regulated output 4 GND Circuit Ground Ground reference for all internal circuitry 5 ISEN Current sense input for current Connect to the PFET drain when using RDS(ON) current sense. Connect to the PFET limit detection. source and the sense resistor when using a current sense resistor. 6 PGATE Gate Driver Output Connect to the gate of the external PFET. 7 VCC Output of the gate driver bias Output of the negative voltage regulator (relative to VIN) that biases the PFET gate regulator driver. A low ESR capacitor is required from VIN to VCC, located as close as possible to the pins. 8 VIN Input supply voltage The operating input range is from 4.5V to 42V. A low ESR bypass capacitor must be located as close as possible to the VIN and GND pins. EP Exposed Pad Exposed pad on the underside of the package (HVSSOP-PowerPAD-8 and WSON only). This pad is to be soldered to the PC board ground plane to aid in heat dissipation. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: LM25085 LM25085-Q1 |
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