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BTA312B-800E 데이터시트(PDF) 7 Page - NXP Semiconductors |
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BTA312B-800E 데이터시트(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BTA312B_SER_D_E_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 26 April 2007 7 of 12 NXP Semiconductors BTA312B series D and E 12 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions BTA312B-600D BTA312B-600E BTA312B-800E Unit Min Typ Max Min Typ Max dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 20 - - 50 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) =12A; without snubber; gate open circuit 1 - - 3 - - A/ms VDM = 400 V; Tj = 125 °C; IT(RMS) =12A; dV/dt = 10 V/ µs; gate open circuit 1.5 - - 6 - - A/ms VDM = 400 V; Tj = 125 °C; IT(RMS) =12A; dV/dt=1V/ µs; gate open circuit 4.5 - - 10 - - A/ms tgt gate-controlled turn-on time ITM = 20 A; VD =VDRM(max); IG = 0.1 A; dIG/dt=5A/µs -2 - - 2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −50 150 100 050 001aab101 0.8 1.2 1.6 0.4 VGT VGT(25°C) Tj (°C) −50 150 100 050 001aac669 1 2 3 0 (1) (2) (3) IGT IGT(25°C) |
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