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AM27C512-90DC 데이터시트(PDF) 6 Page - Advanced Micro Devices |
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AM27C512-90DC 데이터시트(HTML) 6 Page - Advanced Micro Devices |
6 / 12 page 6 Am27C512 mon connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the out- put pins are only active when data is desired from a particular memory device. System Applications During the switch between active and standby condi- tions, transient current peaks are produced on the ris- ing and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the out- put capacitance loading of the device. At a minimum, a 0.1 µF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM ar- rays, a 4.7 µF bulk electrolytic capacitor should be used between VCC and VSS for each eight devices. The loca- tion of the capacitor should be close to where the power supply is connected to the array. MODE SELECT TABLE Notes: 1. VH = 12.0 V ± 0.5 V. 2. X = Either VIH or VIL. 3. A1–A8 and A10–15 = VIL 4. See DC Programming Characteristics for VPP voltage during programming. Mode CE# OE#/VPP A0 A9 Outputs Read VIL VIL XX DOUT Output Disable X VIH X X High Z Standby (TTL) VIH X X X High Z Standby (CMOS) VCC ± 0.3 V X X X High Z Program VIL VPP XX DIN Program Verify VIL VIL XX DOUT Program Inhibit VIH VPP X X High Z Autoselect (Note 3) Manufacturer Code VIL VIL VIL VH 01h Device Code VIL VIL VIH VH 91h |
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