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AM28F010 데이터시트(Datasheet) 2 Page - Advanced Micro Devices

부품명 AM28F010
상세내용  1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
PDF  35 Pages
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제조사  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
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 2 page
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2
Am28F010
minutes required for EPROM erasure using ultra-violet
light are eliminated.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as inputs to an internal state-machine
which controls the erase and programming circuitry.
During write cycles, the command register internally
latches address and data needed for the programming
and erase operations. For system design simplifica-
tion, the Am28F010 is designed to support either WE#
or CE# controlled writes. During a system write cycle,
addresses are latched on the falling edge of WE# or
CE# whichever occurs last. Data is latched on the ris-
ing edge of WE# or CE# whichever occurs first. To
simplify the following discussion, the WE# pin is used
as the write cycle control pin throughout the rest of
this text. All setup and hold times are with respect to
the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F010 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are pro-
grammed one byte at a time using the EPROM pro-
gramming mechanism of hot electron injection.
BLOCK DIAGRAM
PRODUCT SELECTOR GUIDE
Family Part Number
Am28F010
Speed Options (VCC = 5.0 V ± 10%)
-70
-90
-120
-150
-200
Max Access Time (ns)
70
90
120
150
200
CE
# (E#) Access (ns)
70
90
120
150
200
OE
# (G#) Access (ns)
35
35
50
55
55
Erase Voltage
Switch
Input/Output
Buffers
Data
Latch
Y-Gating
1,048,576 Bit
Cell Matrix
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Program
Voltage Switch
State
Control
Command
Register
WE
#
CE
#
OE
#
A0–A16
DQ0–DQ7
VCC
VSS
11559H-1
Low VCC
Detector
Program/Erase
Pulse Timer
VPP
To Array




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데이터시트



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부품명상세내용Html View제조사
AM28F010A1 Megabit 128 K x 8-Bit CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms 1 2 3 4 5 MoreAdvanced Micro Devices
AM28F0202 Megabit 256 K x 8-Bit CMOS 12.0 Volt Bulk Erase Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM28F020A2 Megabit 256 K x 8-Bit CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms 1 2 3 4 5 MoreAdvanced Micro Devices
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AM28F512A512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms 1 2 3 4 5 MoreAdvanced Micro Devices
AM29F010A1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only Uniform Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AMD29F010B1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only Uniform Sector Flash Memory 1 2 3 4 5 MoreAdvanced Micro Devices
AM29LV652D128 Megabit 16 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO Control 1 2 3 4 5 MoreSPANSION

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