This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21522

Rev: D Amendment/+1

Issue Date: November 13, 2000

Am29LV004B

4 Megabit (512 K x 8-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

s Single power supply operation

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

s Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29LV004 device

s High performance

— Access times as fast as 70 ns

s Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

s Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

s Unlock Bypass Program Command

— Reduces overall programming time when

issuing multiple program command sequences

s Top or bottom boot block configurations

available

s Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

s Minimum 1,000,000 write cycle guarantee per sector

s 20-year data retention at 125

°C

— Reliable operation for the life of the system

s Package option

— 40-pin TSOP

s Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

s Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

s Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

s Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

s Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data