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AM28F020A-150FCB 데이터시트(PDF) 25 Page - Advanced Micro Devices |
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AM28F020A-150FCB 데이터시트(HTML) 25 Page - Advanced Micro Devices |
25 / 35 page Am28F020A 25 AC Characteristics—Write (Erase/Program) Operations Notes: 1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC Characteristics for Read Only operations. 2. Embedded Program Operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the minimum time for one pass through the programming algorithm. 3. Embedded Erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a typical time for one embedded erase operation. 4. Not 100% tested. Parameter Symbols Am28F020A Speed Options JEDEC Standard Description -70 -90 -120 -150 -200 Unit tAVAV tWC Write Cycle Time (4) Min 70 90 120 150 200 ns tAVWL tAS Address Setup Time Min 0 0 0 0 0 ns tWLAX tAH Address Hold Time Min 45 45 50 60 75 ns tDVWH tDS Data Setup Time Min 45 45 50 50 50 ns tWHDX tDH Data Hold Time Min 10 10 10 10 10 ns tOEH Output Enable Hold Time for Embedded Algorithm only Min 10 10 10 10 10 ns tGHWL Read Recovery Time Before Write Min 0 0 0 0 0 ns tELWLE tCSE CE# Embedded Algorithm Setup Time Min 20 20 20 20 20 ns tWHEH tCH CE# Hold Time Min 0 0 0 0 0 ns tWLWH tWP Write Pulse Width Min 45 45 50 60 60 ns tWHWL tWPH Write Pulse Width High Min 20 20 20 20 20 ns tWHWH3 Embedded Program Operation (2) Min 14 14 14 14 14 µs tWHWH4 Embedded Erase Operation (3) Typ 5 5 5 5 5 sec tVPEL VPP Setup Time to Chip Enable Low (4) Min 100 100 100 100 100 ns tVCS VCC Setup Time (4) Min 50 50 50 50 50 µs tVPPR VPP Rise Time (4) 90% VPPH Min 500 500 500 500 500 ns tVPPF VPP Fall Time (4) 90% VPPL Min 500 500 500 500 500 ns tLKO VCC < VLKO to Reset (4) Min 100 100 100 100 100 ns |
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