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AM28F020A-150FCB 데이터시트(PDF) 31 Page - Advanced Micro Devices |
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AM28F020A-150FCB 데이터시트(HTML) 31 Page - Advanced Micro Devices |
31 / 35 page Am28F020A 31 ERASE AND PROGRAMMING PERFORMANCE Notes: 1. 25 °C, 12 V V PP . 2. Maximum time specified is lower than worst case. Worst case is derived from the Embedded Algorithm internal counter which allows for a maximum 6000 pulses for both program and erase operations. Typical worst case for program and erase is significantly less than the actual device limit. 3. Typical worst case = 84 µs. DQ5 = “1” only after a byte takes longer than 96 ms to program. LATCHUP CHARACTERISTICS PIN CAPACITANCE Note: Sampled, not 100% tested. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Limits Comments Min Typ (Note 1) Max (Note 2) Unit Chip Erase Time 1 10 sec Excludes 00h programming prior to erasure Chip Programming Time 4 25 sec Excludes system-level overhead Write/Erase Cycles 100,000 Cycles Byte Programming Time 14 µs 96 (Note 3) ms Parameter Min Max Input Voltage with respect to VSS on all pins except I/O pins (Including A9 and VPP) –1.0 V 13.5 V Input Voltage with respect to VSS on all pins I/O pins –1.0 V VCC + 1.0 V Current –100 mA +100 mA Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time. Parameter Symbol Parameter Description Test Conditions Typ Max Unit CIN Input Capacitance VIN = 0 8 10 pF COUT Output Capacitance VOUT = 0 8 12 pF CIN2 VPP Input Capacitance VPP = 0 8 12 pF Parameter Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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