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AM28F020A-150FCB 데이터시트(PDF) 1 Page - Advanced Micro Devices

부품명 AM28F020A-150FCB
상세설명  2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

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FINAL
Publication# 17502
Rev: D Amendment/+1
Issue Date: January 1998
Am28F020A
2 Megabit (256 K x 8-Bit)
CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance
— Access times as fast as 70 ns
s CMOS low power consumption
— 30 mA maximum active current
— 100 µA maximum standby current
— No data retention power consumption
s Compatible with JEDEC-standard byte-wide
32-pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
s 100,000 write/erase cycles minimum
s Write and erase voltage 12.0 V
±5%
s Latch-up protected to 100 mA from
–1 V to VCC +1 V
s Embedded Erase Electrical Bulk Chip Erase
— Five seconds typical chip erase, including
pre-programming
s Embedded Program
— 14 µs typical byte program, including time-out
— 4 seconds typical chip program
s Command register architecture for
microprocessor/microcontroller compatible
write interface
s On-chip address and data latches
s Advanced CMOS flash memory technology
— Low cost single transistor memory cell
s Embedded algorithms for completely self-timed
write/erase operations
GENERAL DESCRIPTION
The Am28F020A is a 2 Megabit Flash memory orga-
nized as 256 Kbytes of 8 bits each. AMD’s Flash mem-
ories offer the most cost-effective and reliable read/
write no n-volat ile ran dom access memor y. Th e
Am28F020A is packaged in 32-pin PDIP, PLCC, and
TSOP versions. It is designed to be reprogrammed and
erased in-system or in standard EPROM programmers.
The Am28F020A is erased wh en sh ip pe d from
the factory.
The standard Am28F020A offers access times of as
fast as 70 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus conten-
tion, the device has separate chip enable (CE#) and
output enable (OE#) controls.
AMD’s Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
Am28F020A uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining
maximum EPROM compatibility.
T he A m2 8 F0 20A i s c o mp ati bl e w i t h th e AM D
Am28F256A, Am28F512A, and Am28F010A Flash
memories. All devices in the Am28Fxxx family follow
the JEDEC 32-pin pinout standard. In addition, all
devices within this family that offer Embedded Algo-
rithms use the same command set. Th is o ffe rs
designers the flexibility to retain the same device foot-
print and command set, at any density between
256 Kbits and 2 Mbits.
AMD’s Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The AMD cell is designed to optimize the erase and
programming mechanisms. In addition, the combina-
tion of advanced tunnel oxide processing and low
internal electric fields for erase and programming oper-
ations produces reliable cycling. The Am28F020A uses
a 12.0
±5% V
PP supply input to perform the erase and
programming functions.
The highest degree of latch-up protection is achieved
with AMD’s proprietary non-epi process. Latch-up pro-
tection is provided for stresses up to 100 mA on
address and data pins from –1 V to VCC +1 V.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F020A electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are
programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.


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