BC856 datasheet(1/2 Pages) WINNERJOIN

부품명	BC856

상세설명	PNP SILICON TRANSISTOR

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ELECTRONIC

CO.,LTD

Electrical Characteristics

(Ta=25 C)

Characteristic

Symbol Test Condition

Unit

Max.

Typ.

Min.

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

Base-emitter saturatio voltage

Transition Frequency

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

HFE(1)

VCE(sat)

fT

I =-10 A, I =0

C

E

I =-10 mA, I =0

C

B

I =-1 A, I =0

E

C

V

=-45V, I =0

CB

E

V

=-5V, I =0

EB

C

V

=-5V, I =-2mA

CE

C

I =-100mA, I =-5mA

C

B

I =-100mA, I =-5mA

C

B

V

=-5V, I =-10mA

CE

C

,f=100MHz

100

-0.1

-0.5

-1

V

A

V

MHz

-5

DC Current Gain (Note)

VBE(sat)

。

PNP SILICON TRANSISTOR

B 8 5 6 - B C 8 5 8

C

BC856

BC857

B 858

C

-80

-50

-30

-65

-45

-30

BC856

BC857

B 858

C

BC856

BC857

B 858

C

V

=-70V, I =0

CB

E

V

=-25V, I =0

CB

E

BC856

BC857

B 858

C

V

=-40V, I =0

CB

E

-0.1

A

V

=-60V, I =0

CB

E

V

=-25V, I =0

CB

E

BC856

BC857

B 858

C

125

220

420

250

475

800

Power dissipation

P

: 0.3 W (Tamb=25 C)

Pluse Drain

I

: -0.1 mA

Reverse Voltage

V

: BC856 -80V

BC857 -50V

BC858 -30V

Operating and storage junction temperature range

T , T

: -55 C to +150 C

Features

M

(BR)CBO

j

stg

C

CM

。

3

1

2

SOT-23

1.BASE

2.EMITTER

3.COLLECTOR

1.

1.3

2.4

Unit:mm

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WEJ ELECTRONIC CO.

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