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AM29F100T-90EIB 데이터시트(PDF) 7 Page - Advanced Micro Devices |
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AM29F100T-90EIB 데이터시트(HTML) 7 Page - Advanced Micro Devices |
7 / 36 page Am29F100 7 DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The appropriate device bus operations table lists the inputs and control levels required, and the re- sulting output. The following subsections describe each of these operations in further detail. Table 1. Am29F100 Device Bus Operations Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Addresses In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A15:A0 in word mode (BYTE# = VIH), A15:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions must be implemented via programming equipment. See the “Sector Pro- tection/Unprotection” section. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word configura- tion. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and con- trolled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are ac- tive and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should re- main at VIH. The BYTE# pin determines whether the de- vice outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware re- set. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See “Reading Array Data” for more information. Refer to the AC Read Operations table for timing specifica- tions and to the Read Operations Timings diagram for the timing waveforms. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which in- cludes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” for more information. Operation CE# OE# WE# RESET# Addresses (Note 1) DQ0– DQ7 DQ8–DQ15 BYTE# = VIH BYTE# = VIL Read L L H H AIN DOUT DOUT DQ8–DQ14 = High-Z, DQ15 = A-1 Write L H L H AIN DIN DIN Standby VCC ± 0.5 V X X VCC ± 0.5 V X High-Z High-Z High-Z Output Disable L H H H X High-Z High-Z High-Z Hardware Reset X X X L X High-Z High-Z High-Z Temporary Sector Unprotect XX X VID AIN DIN DIN High-Z |
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