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CD00257532 데이터시트(PDF) 7 Page - STMicroelectronics |
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7 / 19 page L4949ED-E, L4949EP-E Electrical specifications Doc ID 16823 Rev 1 7/19 2 Electrical specifications 2.1 Absolute maximum ratings 2.2 Thermal data Table 3. Absolute maximum ratings(1) 1. The circuit is ESD protected according to MIL-STD-883C. Symbol Parameter Value Unit VSDC DC operating supply voltage 28 V VSTR Transient supply voltage (T < 1s) 40 V IO Output current Internally limited VO Output voltage 20 V VRES, VSO Output voltage 20 V IRES, ISO Output current 5 mA VCT Reset delay voltage 7 V VSIDC Sense input voltage 28 V VZ Preregulator output voltage 7 V IZ Preregulator output current 5 mA TJ Junction temperature -40 to +150 °C Tstg Storage temperature range -55 to +150 °C Table 4. Thermal data Symbol Description SO-8 SO20L Unit Rth j-amb Thermal Resistance Junction-ambient (max) 200 50 °C/W Rth j-pins Thermal Resistance Junction-pins (max) 15 °C/W TJSD Thermal Shutdown Junction temperature 165 °C |
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