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IRF8308MTRPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF8308MTRPBF
상세설명  RoHs Compliant Containing No Lead and Bromide
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF8308MTRPBF 데이터시트(HTML) 1 Page - International Rectifier

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1
5/4/11
Fig 1. Typical On-Resistance Vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
Notes:
IRF8308MPbF
IRF8308MTRPbF
DirectFET
™ Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Typical values (unless otherwise specified)
PD -97671
l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
SQ
SX
ST
MQ
MX
MT
MP
DirectFET
™ ISOMETRIC
MX
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
21
12
Max.
21
150
212
±20
30
27
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
0
2
4
6
8
TJ = 25°C
TJ = 125°C
ID = 27A
0
20406080
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 24V
VDS= 15V
ID= 21A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
28nC
8.2nC
3.5nC
34nC
20nC
1.8V


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