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BAS16T 데이터시트(PDF) 8 Page - NXP Semiconductors |
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BAS16T 데이터시트(HTML) 8 Page - NXP Semiconductors |
8 / 20 page BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 8 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 8. Test information 9. Package outline (1) IR =1mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal RS = 50 Ω I Ri = 50 Ω OSCILLOSCOPE 1 k Ω 450 Ω D.U.T. mga882 VFR t output signal V Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F) 04-11-04 Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 04-11-29 Dimensions in mm 1.2 1.0 0.25 0.10 3.6 3.4 2.7 2.5 0.55 0.35 0.70 0.55 1.7 1.5 1 2 |
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