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SI2323CDS-T1-GE3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI2323CDS-T1-GE3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Vishay Siliconix Si2323CDS Document Number: 65700 S13-2081-Rev. B, 30-Sep-13 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS =5 V thru 2 V VGS =1.5 V VGS =1 V 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 ID - Drain Current (A) VGS =2.5 V VGS =4.5 V VGS =1.8V 0 1 2 3 4 5 04 8 12 16 20 ID =4.6 A Qg - Total Gate Charge (nC) VDS = 16 V VDS =10 V VDS =5 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC =- 55 °C Crss 0 450 900 1350 1800 2250 0 5 10 15 20 Ciss VDS - Drain-to-Source Voltage (V) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS =4.5 V,ID =4.6 A VGS =2.5 V,ID =4.1 A |
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