TSF20H120C datasheet(1/3 Pages) TSC

부품명	TSF20H120C

상세설명	Trench MOS Barrier Schottky Rectifier

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제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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- Patented Trench MOS Barrier Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Lower power loss/ High efficiency

- High forward surge capability

SYMBOL

UNIT

VRRM

V

dV/dt

V/μs

VBR

V

Typ.

Max.

Typ.

Max

Typ.

Max.

IF = 5A

0.64

-

0.68

-

0.73

-

IF = 10A

0.74

0.81

0.78

0.87

0.81

1.10

IF = 5A

0.55

-

0.56

-

0.59

-

IF = 10A

0.63

0.70

0.63

0.69

0.67

0.73

TJ = 25°C

-

200

-

250

-

150

μA

TJ = 125°C

1.5

10515310

mA

RθjC

OC/W

TJ

OC

TSTG

OC

Document Number：DS_DS_D1401006

Version:D14

Molding compound meets UL 94 V-0 flammability rating

Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant

Terminal：

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Instantaneous reverse current per diode at rated

reverse voltage

IR

VAC

Isolation voltage from terminal to heatsink t = 1 min

Breakdown voltage ( IR =1.0mA, Ta =25°C )

120

Instantaneous forward voltage per diode

( Note1 )

TJ = 25°C

VF

TJ = 125°C

VF

100

V

150

A

FEATURES

IFSM

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)

Voltage rate of change (Rated VR)

per diode

MECHANICAL DATA

Operating junction temperature range

Storage temperature range

- 55 to + 150

Typical thermal resistance per diode

Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle

2.5

4.9

3.8

TSF20H100C

Polarity :

As marked

Weight：

1.7 gram (approximately)

Maximum average forward rectified

current

Mounting torque :

5 in-lbs. max.

Maximum repetitive peak reverse voltage

PARAMETER

TSF20H100C thru TSF20H150C

Taiwan Semiconductor

A

IF(AV)

ITO-220AB

per device

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

Case :

ITO-220AB

TSF20H120C TSF20H150C

Trench MOS Barrier Schottky Rectifier

10

110

10000

1500

150

120

100

20

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

유사한 부품 번호 - TSF20H120C

제조업체	부품명	데이터시트	상세설명
Taiwan Semiconductor Co...	TSF20H120C	223Kb / 5P	Trench Schottky Rectifier
Taiwan Semiconductor Co...	TSF20H120C-S	243Kb / 5P	Trench Schottky Rectifier

More results

유사한 설명 - TSF20H120C

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	V30DL45BP	122Kb / 6P	Trench MOS Barrier Schottky Rectifier Revision: 18-Mar-14
	V10PL45-M3	88Kb / 6P	Trench MOS Barrier Schottky Rectifier Revision: 09-Dec-13
	VBT1045CBP	91Kb / 5P	Trench MOS Barrier Schottky Rectifier Revision: 22-May-12
DONGGUAN YOU FENG WEI E...	8A45-DO-201AD	1,012Kb / 3P	Trench MOS Barrier Schottky Rectifier
	8L45-DO-201AD	1Mb / 3P	Trench MOS Barrier Schottky Rectifier
	3L40-DO-201AD	829Kb / 3P	Trench MOS Barrier Schottky Rectifier
	10L80-DO-201AD	1Mb / 3P	Trench MOS Barrier Schottky Rectifier
Vishay Siliconix	VT1080S	148Kb / 5P	Trench MOS Barrier Schottky Rectifier Revision: 08-Sep-09
Vishay Siliconix	VFT2080S	78Kb / 4P	Trench MOS Barrier Schottky Rectifier Revision: 18-Nov-10
DONGGUAN YOU FENG WEI E...	10V150SP	838Kb / 3P	Trench MOS Barrier Schottky Rectifier
DONGGUAN YOU FENG WEI E...	15L45SC	731Kb / 3P	Trench MOS Barrier Schottky Rectifier

More results

TSF20H120C 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

TSF20H120C 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

유사한 부품 번호 - TSF20H120C

유사한 설명 - TSF20H120C

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