CSD19531KCS datasheet(4/7 Pages) TI1

부품명	CSD19531KCS

상세설명	100V N-Channel NexFET??Power MOSFETs

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제조업체	TI1 [Texas Instruments]

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4 / 7 page

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TC - Case Temperature (ºC)

VGS = 6V

VGS = 10V

ID =60A

G001

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VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

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TC - Case Temperature (ºC)

ID = 250uA

G001

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VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 60A

TC = 125°C,I D = 60A

G001

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Qg - Gate Charge (nC)

ID = 60A

VDS = 50V

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VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD19531KCS

SLPS407 – SEPTEMBER 2013

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

4

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유사한 부품 번호 - CSD19531KCS

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