TIP105 datasheet(2/2 Pages) BOCA

부품명	TIP105

상세설명	Power Darlingtons for Linear and Switching Applications

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제조업체	BOCA [Boca Semiconductor Corporation]

홈페이지	http://www.bocasemi.com

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2 / 2 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current

IC

max.

8.0

A

Collector peak current

ICM

max.

15

A

Base current

IB

max.

1.0

A

Total power dissipation up to TC = 25°C Ptot

max.

80

W

Derate above 25°C

max

0.64

W/° C

Total power dissipation up to TA = 25°C Ptot

max.

2.0

W

Derate above 25°C

max

0.016

W/° C

Junction temperature

Tj

max.

150

°C

Storage temperature

Tstg

–65 to +150

°C

THERMAL RESISTANCE

From junction to ambient

Rth j–a

62.5

°C/W

From junction to case

Rth j–c

1.56

°C/W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

100 101 102

105 106 107

Collector cutoff current

IB = 0; VCE = 30 V

ICEO

max. 50

–

µA

IB = 0; VCE = 40 V

ICEO

max.

–

50

–

µA

IB = 0; VCE = 50 V

ICEO

max.

–

50

µA

IE = 0; VCB = 60V

ICBO

max. 50

–

µA

IE = 0; VCB = 80V

ICBO

max.

–

50

–

µA

IE = 0; VCB = 100V

ICBO

max.

–

50

µA

Emitter cut-off current

IC = 0; VEB = 5 V

IEBO

max.

8

mA

Breakdown voltages

IC = 30 mA; IB = 0

VCEO(sus)*

min.

60

80

100 V

IC = 1 mA; IE = 0

VCBO

min.

60

80

100 V

IE = 1 mA; IC = 0

VEBO

min.

5.0

V

Saturation voltages

IC = 3 A; IB = 6 mA

VCEsat*

max.

2.0

V

IC = 8 A; IB = 80 mA

VCEsat*

max.

2.5

V

Base-emitter on voltage

IC = 8 A; VCE = 4 V

VBE(on)*

max.

2.8

V

D.C. current gain

IC = 3 A; VCE = 4 V

hFE*

min.

1.0

K

max.

20

K

IC = 8 A; VCE = 4 V

hFE*

min.

200

Small signal current gain

IC = 3A; VCE = 4V; f = 1.0 MHz

|hfe|

min.

4.0

Output capacitance f = 0.1 MHz

IE = 0; VCB = 10V, PNP

Co

max.

300

pF

NPN

max.

200

pF

Forward voltage of commutation diode

IF = –IC = 10A; IB = 0

VF*

max.

2.8

V

* Pulsed: pulse duration = 300 µs; duty cycle

≤ 2%.

TIP100, TIP101, TIP102

TIP105, TIP106, TIP107

http://www.bocasemi.com

page: 2

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