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TC4469MJD 데이터시트(PDF) 10 Page - Microchip Technology |
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TC4469MJD 데이터시트(HTML) 10 Page - Microchip Technology |
10 / 22 page TC4467/TC4468/TC4469 DS21425B-page 10 2002 Microchip Technology Inc. A resistive-load-caused dissipation for supply- referenced loads is a function of duty cycle, load current and output voltage. The power dissipation is EQUATION Quiescent power dissipation depends on input signal duty cycle. Logic HIGH outputs result in a lower power dissipation mode, with only 0.6 mA total current drain (all devices driven). Logic LOW outputs raise the current to 4 mA maximum. The quiescent power dissipation is: EQUATION Transition power dissipation arises in the complimen- tary configuration (TC446X) because the output stage N-channel and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The transition power dissipation is approximately: EQUATION Package power dissipation is the sum of load, quiescent and transition power dissipations. An example shows the relative magnitude for each term: Maximum operating temperature is: EQUATION FIGURE 4-1: Switching Time Test Circuit. PL DVOIL = IL Load Current = VO Device Output Voltage = DDuty Cycle = PQ VS DIH () 1D – ()IL + () = IL Quiescent Current with all outputs HIGH = IH Quiescent Current with all outputs LOW = DDuty Cycle = VS Supply Voltage = (4 mA max.) (0.6 mA max.) Note: Ambient operating temperature should not exceed +85°C for "EJD" device or +125°C for "MJD" device. PT fVs 10 10 9 – × () = VS 15 V = C 1000 pF Capacitive Load = D 50% = f200 kHz = PD Package Power Dissipation = PL PQ PT ++ = 45mW 35mW 30mW ++ = 110mW = TJ θJA PD () – 141 °C = θJA Junction-to-ambient thernal resistance = TJ Maximum allowable junction temperature = (+150 °C ) (83.3 °C/W) 14-pin plastic package VOUT 470 pF 1B 1A 2B 2A 3B 3A 4B 4A 1 µF Film 0.1 µF Ceramic 90% 10% 10% 10% 90% +5 V Input (A, B) VDD Output 0V 0V 90% 1 2 3 4 5 6 8 9 7 10 11 12 13 14 VDD tR tD1 tF tD2 Input: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec |
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