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TC4469MJD 데이터시트(PDF) 10 Page - Microchip Technology

부품명 TC4469MJD
상세설명  Logic-Input CMOS Quad Drivers
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TC4467/TC4468/TC4469
DS21425B-page 10
 2002 Microchip Technology Inc.
A
resistive-load-caused
dissipation
for
supply-
referenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
EQUATION
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
EQUATION
Transition power dissipation arises in the complimen-
tary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes.
The
transition
power
dissipation
is
approximately:
EQUATION
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
FIGURE 4-1:
Switching Time Test Circuit.
PL
DVOIL
=
IL
Load Current
=
VO
Device Output Voltage
=
DDuty Cycle
=
PQ
VS DIH
()
1D
()IL
+
()
=
IL
Quiescent Current with all outputs HIGH
=
IH
Quiescent Current with all outputs LOW
=
DDuty Cycle
=
VS
Supply Voltage
=
(4 mA max.)
(0.6 mA max.)
Note:
Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
PT
fVs 10 10
9
×
()
=
VS
15 V
=
C
1000 pF Capacitive Load
=
D
50%
=
f200 kHz
=
PD
Package Power Dissipation
=
PL PQ PT
++
=
45mW 35mW 30mW
++
=
110mW
=
TJ θJA PD
()
141
°C
=
θJA
Junction-to-ambient thernal resistance
=
TJ
Maximum allowable junction temperature
=
(+150
°C )
(83.3
°C/W) 14-pin plastic package
VOUT
470 pF
1B
1A
2B
2A
3B
3A
4B
4A
1 µF Film
0.1 µF Ceramic
90%
10%
10%
10%
90%
+5 V
Input
(A, B)
VDD
Output
0V
0V
90%
1
2
3
4
5
6
8
9
7
10
11
12
13
14
VDD
tR
tD1
tF
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec


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