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2N3447 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2N3447 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N3447 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 60 V VCE(sat)-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=7A;IB=1.5A 3.0 V VBE(on) Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICEO Collector cut-off current VCE=60V; IB=0 0.7 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=5V 40 120 |
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