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IRLU2703PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRLU2703PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 11 page IRLR/U2703PbF HEXFET® Power MOSFET S D G Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.3 RθJA Case-to-Ambient (PCB mount)** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance VDSS = 30V RDS(on) = 0.045Ω ID = 23A Description 12/6/04 www.irf.com 1 D-Pak TO-252AA I-Pak TO-251AA l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 16 A IDM Pulsed Drain Current 96 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 77 mJ IAR Avalanche Current 14 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings PD- 95083A l Lead-Free |
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