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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF6709S2TR1PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF6709S2TR1PBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 04/07/09 IRF6709S2TRPbF IRF6709S2TR1PbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline Typical values (unless otherwise specified) DirectFET ISOMETRIC S1 l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques l 100% Rg tested Description The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.02mH, RG = 25Ω, IAS = 10A. Notes: S1 S2 SB M2 M4 L4 L6 L8 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 10 20 30 ID = 12A TJ = 25°C TJ = 125°C 02468 10 12 14 16 18 20 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 20V VDS= 13V ID= 10A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 8.1nC 2.8nC 1.1nC 9.3nC 4.6nC 1.8V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 51 Max. 9.7 39 100 ±20 25 12 10 VDSS VGS RDS(on) RDS(on) 25V max ±20V max 5.9m Ω@10V 10.1mΩ@4.5V PD - 97328A |
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