IRF6810STR1PBF datasheet(5/9 Pages) IRF

부품명	IRF6810STR1PBF

상세설명	DirectFET짰Power MOSFET

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IRF6810STRPbF

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5

Fig 13. Typical Threshold Voltage vs. Junction

Temperature

Fig 12. Maximum Drain Current vs. Case Temperature

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig 11. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy vs. Drain Current

25

50

75

100

125

150

TC , Case Temperature (°C)

0

10

20

30

40

50

60

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 25μA

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

20

40

60

80

100

120

140

160

180

200

220

ID

TOP

1.6A

2.4A

BOTTOM 13A

0.3

0.5

0.7

0.9

1.1

1.3

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

TJ = 150°C

TJ = 25°C

TJ = -40°C

VGS = 0V

0.01

0.1

1

10

100

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

Ta = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100μsec

DC

유사한 부품 번호 - IRF6810STR1PBF

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRF6810STR1PBF	283Kb / 9P	RoHS Compliant and Halogen Free

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