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IRF6892SPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF6892SPBF
상세설명  DirectFET짰 MOSFET with Schottky Diode
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6892SPBF 데이터시트(HTML) 1 Page - International Rectifier

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1
4/4/12
IRF6892STRPbF
IRF6892STR1PbF
DirectFET®
plus MOSFET with Schottky Diode ‚
Applicable DirectFET Outline and Substrate Outline

Typical values (unless otherwise specified)
ISOMETRIC
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 22A.
Notes:
PD - 97770
S3C
l RoHS Compliant and Halogen Free

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application

l Compatible with existing Surface Mount Techniques

l 100% Rg tested
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
22
240
Max.
22
125
220
±16
25
28
V
A
D
G
D
S
S
S
S1
S2
S3C
M2
M4
L4
L6
L8
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0.0
2.0
4.0
6.0
8.0
ID = 28A
TJ = 25°C
TJ = 125°C
0
10
20
304050
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
VDS= 5V
ID= 22A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
17nC
6.0nC
2.3nC
39nC
16nC
1.8V
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V


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IRF6892SPBF IRF-IRF6892SPBF_15 Datasheet
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   RoHS Compliant and Halogen Free
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